power transistors 1 publication date: april 2003 sjd00179bed 2SD1263, 2SD1263a silicon npn triple diffusion planar type for power amplification features ? high collector-base voltage (emitter open) v cbo ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package parameter symbol rating unit collector-base voltage 2SD1263 v cbo 350 v (emitter open) 2SD1263a 400 collector-emitter voltage 2SD1263 v ceo 250 v (base open) 2SD1263a 300 emitter-base voltage (collector open) v ebo 5v collector current i c 0.75 a peak collector current i cp 1.5 a collector power t c = 25 cp c 35 w dissipation 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2SD1263 v ceo i c = 30 ma, i b = 0 250 v (base open) 2SD1263a 300 base-emitter voltage v be v ce = 10 v, i c = 1 a 1.5 v collector-emitter cutoff 2SD1263 i ces v ce = 350 v, v be = 01ma current (e-b short) 2SD1263a v ce = 400 v, v be = 01 collector-emitter cutoff 2SD1263 i ceo v ce = 150 v, i b = 01ma current (base open) 2SD1263a v ce = 200 v, i b = 01 emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 01ma forward current transfer ratio h fe1 * v ce = 10 v, i c = 0.3 a 40 250 ? h fe2 v ce = 10 v, i c = 1 a 10 collector-emitter saturation voltage v ce(sat) i c = 1 a, i b = 0.2 a 1 v transition frequency f t v ce = 5 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 a 0.5 s storage time t stg v cc = 50 v 2.0 s fall time t f 0.5 s 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r q p h fe1 40 to 90 70 to 150 120 to 250
2SD1263, 2SD1263a 2 sjd00179bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 160 40 120 80 0 10 20 30 40 50 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)with a 50 50 2mm al heat sink (4)without heat sink (p c =2w) (1) (2) (3) (4) 012 210 48 6 0 1.2 1.0 0.8 0.6 0.4 0.2 collector current i c (a) collector-emitter voltage v ce (v) i b =14ma 12ma 10ma 2ma 4ma 6ma 8ma t c =25?c 0 2.4 0.4 2.0 0.8 1.6 1.2 0 0.8 1.6 2.4 4.0 3.2 base-emitter voltage v be (v) collector current i c (a) t c =100?c 25?c ?5?c v ce =10v 1 0.1 0.01 0.01 0.1 1 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 t c =100?c 25?c ?5?c 0.01 0.1 1 10 1 10 10 2 10 3 10 4 forward current transfer ratio h fe collector current i c (a) v ce =10v t c =100?c 25?c ?5?c 0.001 0.01 0.1 1 0.1 1 10 100 1 000 collector current i c (a) transition frequency f t (mhz) v ce =10v f=10mhz t c =25?c 0.001 1 0.01 0.1 1 10 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) non repetitive pulse t c =25?c i cp i c t=1ms t=10ms dc 2SD1263 2SD1263a 1 10 ? 2 10 ? 1 10 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink
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